Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Thermally oxidized GaN film for use as gate insulators2001 · 81 citations
2. 2Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density1998 · 194 citations
3. 3Interface-state density at SiO2/GaAs assessed by direct measurement of surface band bending1996 · 13 citations
4. 4Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors1998 · 217 citations
5. 5High-frequency capacitance–voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2/n-GaN metal-insulator-semiconductor structures2001 · 50 citations