Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

Yttrium-doped films were grown by atomic layer deposition via alternating and growth cycles. Precursors used were or and together with ozone. The thick films were amorphous in as-deposited state and crystallized as high-permittivity cubic∕tetragonal polymorphs upon annealing. The best combination of low leakage current of at and high capacitance was achieved with the films grown from , with yttrium content being about 6–7 atom %. The highest permittivity values measured for these films reached 30.