Piezoresistive effect in AlN/GaN short range superlattice structures

We report on a strong piezoresistive effect in AlN–GaN short-range superlattices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially larger than the values of the gauge factor reported for GaN–AlN–GaN semiconductor–insulator–semiconductor structures. The measured data are in good agreement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN–GaN-based materials for the development of piezoelectric and piezoresistive sensors.