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A self-consistent second Born aproxiamtion has been used to calculate the change in the electron and hole densities of states due to ionized donors in silicon. The results are compared with a previous partial-wave technique and found to be in good agreement for a case of common applicability, i.e., a donor density of 1020 cm−3 at room temperature.
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Lowney et al. (1983) studied this question.
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