Incorporation of Si is shown to induce an improvement in the ohmic performance of Ti/Al/Mo/Au metallisation on MOCVD-grown AlGaN/GaN heterostructures. Optimised contact resistance (Rc) and specific contact resistivity (ρc) of Ti/Si/Al/Si/Mo/Au metallisation are 0.16 Ω · mm and 6.77×10−7 Ω · cm2 in comparison to 0.41 Ω · mm and 4.78×10−6 Ω · cm2 obtained for Ti/Al/Mo/Au metallisation. Auger electron spectroscopy analysis indicates that Si containing inter-metallics formation is responsible for enhancement of ohmic performance.
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Mohammed et al. (2005) studied this question.
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