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August 14, 2000Applied Physics Letters

Current conduction mechanism of Si/Ti-based Ohmic contacts to n-GaN

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DKDae Woo KimYonsei UniversityHBHong Koo BaikYonsei University

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Kim et al. (2000) studied this question.

synapsesocial.com/papers/6a9ce3e474ebc55f2882d056https://doi.org/10.1063/1.1289057
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Also Consider

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  1. 1Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN1997 · 263 citations
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