This letter reports DC and RF performance of 0.25 μm gatelength GaInAs/InP composite channel HEMT's with nonalloyed, regrown ohmic contacts by MOCVD. Regrown channel contacts are used to achieve low contact resistance (0.35 /spl Omega/-mm) to (50 /spl Aring/) GaInAs/(150 /spl Aring/) InP composite channel HEMT's. High transconductance (600 mS/mm), high full channel current (650 mA/mm), and high peak cut-off frequencies (FT=70 GHz, Fmax=170 GHz) are observed. Contact transfer resistance of regrown channel contacts is compared to conventional alloyed contacts for varying GaInAs/InP channel composition.
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Shealy et al. (1996) studied this question.
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