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The authors report on the DC and power performance of GaInAs/InP composite channel HEMTs with a 30 Å GaInAs channel. Devices with gate length of 0.15 µm exhibit off-state drain-to-source breakdown voltages of more than 10 V and on-state drain-to-source breakdown voltages of 8 V. Using a 450 µm wide HEMT, an output power of more than 280 mW (0.62 W/mm) has been obtained with power-added efficiency of 46% at 20 GHz.
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Matloubian et al. (1995) studied this question.
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