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A fully monolithic indium phosphide high electron mobility transistor (InP HEMT) two-stage low-noise amplifier has achieved a noise figure, of 4.2 dB with an associated gain of 15.25 dB over the band from 56 to 60 GHz. Noise matching and bias decoupling are accomplished on-chip. The successful performance of the amplifier is credited to accurate characterization of the active and passive devices that make up the circuit.>
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Webster et al. (1992) studied this question.
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