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Experimental evaluation demonstrates low noise temperatures in K-band HEMT amplifiers using suspended stripline matching, highlighting practical microwave designs.
A report is presented on the design and performance of a K-band high electron mobility transistor (HEMT) amplifier whose passive circuit consists of low-loss suspended stripline elements. Single-stage amplifiers were built at 4 GHz and 22 GHz by using readily available commercial HEMT devices. In the desired frequency range from 21 to 23 GHz for the high-frequency design, the best spot noise temperatures were 150 K and 65 K at 21.5 GHz for room and liquid nitrogen temperatures, respectively.>
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Peter et al. (1991) studied this question.
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