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March 25, 2015Japanese Journal of Applied Physics

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Xiaoli Ji Baiqing Liu Hengjing Tang Xue Li Ming Shi Ying Zhou Yue Xu Haimei Gong Feng Yan

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Abstract

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology, Ji, Xiaoli, Liu, Baiqing, Tang, Hengjing, Li, Xue, Shi, Ming, Zhou, Ying, Xu, Yue, Gong, Haimei, Yan, Feng

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Cite This Study

Ji et al. (2015) studied this question.

synapsesocial.com/papers/6a978054d08ffd74dfc6168a https://doi.org/10.7567/jjap.54.04dg09

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