Extended spectral response InGaAs detectors have been grown, fabricated, and characterized for near-infrared detection. The atomic structure of the In0.82Ga0.18As/InP interface was investigated to determine the inhibition of mismatch defects of the two-step growth by TEM. The heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. Dark current of the detector under different temperatures was analyzed to determine the generating mechanism. Due to the presence of the InP window layer and In0.82Ga0.18As absorber layer in the heterostructure, the wavelength spectral response range of the detector is from 1 to 2.5 μm.
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Miao et al. (2013) studied this question.
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