In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 μm and of 6 μs have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.
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Trommer et al. (1986) studied this question.
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