Electron mobility and minority-carrier lifetime of n-InP single crystals grown by liquid-encapsulated Czochralski method

Correlations between electron mobility, minority-carrier lifetime, impurity concentration, and dislocation density have been studied in LEC (liquid-encapsulated Czochralski)-grown InP single crystals. Mobilities approaching 30 000 cm2/V s at 77 K, which correspond to compensation ratios of 0.2–0.4, have been obtained. Hole lifetimes as high as 3 μs have been obtained in dislocation-free single crystals. The experimental results for lifetimes can be explained by a simple model in which dislocation and impurity are considered as recombination centers.