The problems arising under submicron diffusion-length measurements by EBIC are discussed. As an example, the results of diffusion-length measurements in GaN are presented. It is shown that fitting the collection efficiency dependence on beam energy is the most reliable method for this purpose. The depth-dose dependence for GaN is calculated by the Monte-Carlo method and its analytical approximation is presented. This expression was verified experimentally by simultaneous fitting of the collected current dependence on beam energy for a few applied bias values.
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Yakimov et al. (2007) studied this question.
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