Simultaneous extraction of minority-carrier transport parameters in crystalline semiconductors by lateral photocurrent

The mathematical analysis and parameter-extraction process for a new characterization method are presented. This method allows simultaneous measurement of the minority-carrier lifetime, diffusion coefficient, and diffusion lengths as well as surface recombination velocity. The technique employs semi-infinite two-dimensional photodiodes and uniform, instead of focused, illumination. The paper deals with the derivation of exact closed-form solutions associated with two-dimensional devices and discusses the simultaneous extraction of minority-carrier transport parameters.