Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors

We present a study of the effect of the growth of a thin AlN exclusion layer between the AlGaN barrier layer and GaN buffer layer in microwave heterojunction field-effect transistor structures. A dramatic improvement in carrier drift mobility is observed and we present evidence from electronic structure calculations and capacitance–voltage experiments that this improvement is associated with reduced alloy scattering. However, no significant benefit is seen at low carrier concentrations. Reduced electron trapping in the AlGaN is an additional benefit.