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October 1, 2001IEEE Electron Device Letters

AlGaN/AlN/GaN high-power microwave HEMT

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Authors

LSL. ShenWuhan CollegeSHS. HeikmanUniversity of California, Santa BarbaraBMBrendan MoranUniversity of Massachusetts Amherst

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Shen et al. (2001) studied this question.

synapsesocial.com/papers/6a24f1d0055282ef55fec8a6https://doi.org/10.1109/55.954910
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