AlN/GaN Metal Insulator Semiconductor Field Effect Transistor Using Wet Chemical Etching with Hot Phosphoric Acid

AlN/GaN metal insulator semiconductor field effect transistors (MISFET) were fabricated using wet chemical etching with hot phosphoric acid. This technique improved Ohmic contact resistances for the source and drain, and provided a new and simple fabrication process for the MISFET. In a 3 μm gate length, maximum transconductance (gmmax) of 130 mS/mm and maximum drain current (IDmax) of over 600 mA/mm were obtained.