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February 17, 2000Electronics Letters

GaN/AlGaN high electron mobility transistors withf τ of 110 GHz

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Authors

MMM. MicovicHRL Laboratories (United States)NNNam NguyenChildren's Hospital of Los AngelesPJP. JankeHRL Laboratories (United States)

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Micovic et al. (2000) studied this question.

synapsesocial.com/papers/6a86ca72d75f6552a082aaa2https://doi.org/10.1049/el:20000296
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