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October 12, 2000Electronics Letters

GaN MESFETs on (111) Si substrate grown by MOCVD

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Authors

TETakashi EgawaNagoya Institute of TechnologyNNNaoyuki NakadaNagoya Institute of TechnologyHIHiroyasu IshikawaNihon University

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Egawa et al. (2000) studied this question.

synapsesocial.com/papers/6a97821c618eaafe842d1fbehttps://doi.org/10.1049/el:20001282
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