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The contact resistivity of various non-alloyed ohmic contact metallisations on both n- and p+-type Ga0.47In0.53As has been investigated. Pd/AuGe metallisation was found to be most suitable when layers of both doping types were to be contacted in a single step, having lower contact resistivities on p+-GaInAs than Ti/Pt/Au and AuBe/Pt/Au, On n+-GaInAs, the contact resistivity was found to be almost independent of the metallisation used.
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Shantharama et al. (1990) studied this question.
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