Effects and Characterization of Ion Implantation Enhanced GaAs Schottky Barriers

Enhancement of Schottky barrier height of Au and Ag on n‐type by shallow Be implantation (5, 10 keV) has been investigated. An electrostatic model has been used to analyze the Schottky barrier height enhancement and, in fact, provides the basis for agreement between these Be implant results and reported results using MBE grown layers. Results indicate 30% or greater increases in usable gate voltage swing in n‐type doped typical of enhancement mode MESFET's. In addition, range statistics and activation data are reported for 5 and 10 keV Be implantation into .