A junction high electron mobility transistor (JHEMT) has been demonstrated in the InAIAs/InGaAs/InP material system. Selective Zn diffusion is used to form a shallow p+ gate region within a planar-doped HEMT structure grown by MBE. These devices exhibit an extrinsic DC transconductance of 140 mS/mm for a 1.6 μm gate length and good pinchoff characteristics.
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Boos et al. (1990) studied this question.
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