A remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region.
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Canali et al. (1990) studied this question.
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