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Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance, Pei, Yi, Shen, Likun, Palacios, Tomas, Fichtenbaum, Nicholas A., Mccarthy, Lee S., Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
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Pei et al. (2007) studied this question.
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