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April 1, 2006IEEE Electron Device LettersOpen Access

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

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Authors

FRF. RechtLML. McCarthySRSiddharth Rajan

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Recht et al. (2006) studied this question.

synapsesocial.com/papers/6a9e094f031501fc02c7cc48https://doi.org/10.1109/led.2006.870419
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