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July 1, 2005Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy

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Authors

CPC. PoblenzSoraa (United States)PWPatrick WaltereitUniversity of California, Santa Barbara
James S. Speck
James S. SpeckLinköping University

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Poblenz et al. (2005) studied this question.

synapsesocial.com/papers/6a85c09a37bcb8373dadbaa4https://doi.org/10.1116/1.1993615
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