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May 1, 2004IEEE Electron Device LettersOpen Access

Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE

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Authors

SRSiddharth RajanDalhousie UniversityPWPatrick WaltereitUniversity of California, Santa BarbaraCPC. PoblenzSoraa (United States)

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Rajan et al. (2004) studied this question.

synapsesocial.com/papers/6a1d4486750575be8d2f57bchttps://doi.org/10.1109/led.2004.826977
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