We developed an efficient method to extract a large-signal lookup table model for InP high electron-mobility transistors that takes impact ionization into account. By measuring the device on a logarithmic frequency scale, we obtain high resolution at lower frequencies to accurately characterize impact ionization, and a sufficient number of data points at millimeter-wave frequencies to extract the nonquasi-static parameters. Model validation through linear and nonlinear device measurements and its application to monolithic-microwave integrated-circuit design are presented.
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Orzati et al. (2003) studied this question.
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