Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap(N_ it)and bulk oxide chargeQ_ oxcreation in the channel and in the drift regions separately. The growth rates ofN_ itandQ_ oxare extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximumIgstress causes the largest drain current and subthreshold slope degradation because of bothN_ itgeneration in the channel andQ_ oxcreation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.