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April 1, 1994IEEE Microwave and Guided Wave Letters

A new nonlinear I(V) model for FET devices including breakdown effects

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Authors

JTJean-Pierre TeyssierKeysight Technologies (United States)JVJ.P. ViaudRQRaymond QuéréXLIM

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Teyssier et al. (1994) studied this question.

synapsesocial.com/papers/6a978d92ff0077060d8bda4ehttps://doi.org/10.1109/75.282573
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