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October 1, 1982IEEE Transactions on Electron Devices

Gate-drain avalanche breakdown in GaAs power MESFET's

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Authors

JDJ. P. R. DavidUniversity of SheffieldJSJ.E. SitchNortel (Canada)MSM.S. SternUniversity of Nottingham

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David et al. (1982) studied this question.

synapsesocial.com/papers/6a83c9378dcee831255bcf97https://doi.org/10.1109/t-ed.1982.20913
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Power-limiting breakdown effects in GaAs MESFET's1981 · 125 citations
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  3. 3Large-signal analysis of a silicon Read diode oscillator1969 · 2,270 citations
  4. 4Light emission and burnout characteristics of GaAs power MESFET's1978 · 69 citations
  5. 5Control of gate—Drain avalanche in GaAs MESFET's1980 · 131 citations