The performance of a planar field effect controlled transferred electron oscillator has been significantly improved by reducing the length of the low field regions near drain and source. 45 mW with 4.3% efficiency at 28.4 GHz and 24 mW with 3.2% at 37.4 GHz have been obtained, which is a factor of 4.5 times larger than was obtained a year ago.
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Scheiber et al. (1989) studied this question.
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