High Quality Gate Dielectric Film on Poly-Silicon Grown at Room Temperature using UV Light Excited Ozone

We have grown films on polycrystalline Si using excited ozone produced by ultraviolet light irradiation of ozone, and characterized their electrical properties in the metal-insulator-semiconductor capacitor configuration. films of thickness on poly-Si layers were grown in even at room temperature. The leakage current density across the film fitted well the Fowler-Nordheim tunnel current behavior and breakdown occurred at above , showing that the film was of device quality. The rate of Si oxidation by excited ozone was similar for both Si(100) and Si(111) wafers, as was the interface trap density . These results indicate that excited ozone can form a homogenous film on poly-silicon. We conclude that excited ozone is one of the most efficient reactive species for film formation on poly-Si at room temperature.