Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process

A system is described which can continuously generate/supply highly concentrated (HC) ozone gas to satisfy the future need for practical low-temperature oxidation. This system comprises four ozone vessels, each with independent temperature control. The system can supply a constant flow of HC ozone gas by allocating one of four modes of operation, i.e., accumulation/storage, vaporization (supply), evacuation, and cooling, to each of the ozone vessels so that all the modes can be simultaneously addressed. The maximum flow rate is 60 sccm with a flux stability of ±1.1%, and an ozone concentration of over 99.5 vol % can be achieved at the system outlet. The system was applied to the formation of an ultrathin SiO2 film on a 4 in. diameter silicon wafer substrate.