Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation

Bi-Sr-Ca-Cu-O thin film with a zero-resistance critical temperature of 58 K has been grown by the molecular beam epitaxy technique in an ozone and oxygen mixture ambient under irradiation of ultraviolet light without postheat treatment. In situ reflection high-energy electron diffraction measurement during the layer-by-layer growth reveals that the reconstruction takes place just after completing the deposition of a single unit layer (a half-unit cell).