The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 °C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200 °C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm 2 /V·s. The leakage current of gate oxide was of a few tens of nA/cm 2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.