Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than those of the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.