Measurement of interface-state parameters near the band edge at the Si/SiO2 interface by the conductance method

The interface-state parameters near the band edge at the Si/SiO2 interface were measured using the MOS conductance method with the reflection technique, extending the frequency up to 100 MHz. The double peaks were observed in the conductance-vs-frequency curves. The decrease of the capture cross section toward the band edge was found due to the overlap of the double peaks. The new peak at higher frequencies suggests the existence of new interface states, which has been overlooked so far.