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The author has investigated the effect of selenium treatment of GaAs on the metal-insulator-semiconductor (MIS) Schottky diode characteristics. The results show that the surface-state density and trap density at the interface decrease. This results in decrease in the barrier height and reverse current. The treated diodes showed little aging effect. These observations can be explained using the formation of arsenic selenium and selenium-selenium bonds at the surface and in the thin layer next to the surface within the GaAs.
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G. Eftekhari (1993) studied this question.
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