Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs exhibited approximately 20% lower device temperature from 0.5 to 9 W/mm dc power device operation. Temperature measurements were performed by Raman thermography and verified by solving the 2-D heat equation within the device structure. NCD-capped HEMTs exhibited 1) improved carrier densityNS, sheet resistanceRSH; 2) stable Hall mobility μHand threshold voltageVT; and 3) degraded on-state resistanceRON, contact resistanceRC, transconductanceGm, and breakdown voltageVBR.
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Tadjer et al. (2011) studied this question.
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