A direct comparative study of the interfaces Al/H:Si(111)-(1×1) and Al/Si(111)-(7×7) by means of high-resolution photoelectron spectroscopy and Auger spectroscopy reveals large differences for aluminum coverages below Θ∼5 ML. Hydrogen termination suppresses the formation of interfacial AlSi and promotes island growth. The Schottky barrier formation is delayed compared to the Al/Si(111)-(7×7) interface. For high coverages the Schottky barrier is the same for both interfaces.
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Grupp et al. (1998) studied this question.
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