Positron Annihilation Study of Defects Created in Silicon Irradiated with Electrons of High Energy

Lifetime and Doppler broadening measurements are carried out as a function of temperature on two paris of silicon samples (n and p-type) irradiated with 17 MeV electrons to a dose of 4 × 1019 e/cm2. The results obtained below the irradiation temperature (i.e. in the interval 90 to 300 K) are interpreted by assuming the presence of shallow traps. From the isochronal annealing results different annealing stages are seen in both sets of samples. During annealing defect growth is seen as an increase of the second positron lifetime.