Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam

Vacancy-type defects in 2-MeV B+-, 2-MeV P+- and 3-MeV As+-ion implanted Si(100) were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species were identified as vacancy-clusters from their characteristic values of the lineshape parameter S. From isochronal annealing experiments for the P+-implanted specimen, two types of oxygen-vacancy complexes were found to coexist even after 1200°C annealing.