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January 2, 1995Applied Physics Letters

Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxy

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Authors

STSatoru TanakaKyushu UniversityRKR. S. KernNorfolk State UniversityRDR. F. DavisCarnegie Mellon University

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Tanaka et al. (1995) studied this question.

synapsesocial.com/papers/6a97982edfe10a478e9da528https://doi.org/10.1063/1.114173
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