Indium Nitride Film Growth by Metal Organic Chemical Vapor Deposition with Nitrogen Activation in Electron Cyclotron Resonance Discharge Sustained by 24 GHz Gyrotron Radiation

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We report the results of the first experiments on the growth of indium nitride films by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition. Discharge sustained by the radiation of a technological gyrotron with a frequency of 24 GHz and power up to 5 kW was used to provide active nitrogen flow. The use of higher frequency microwave radiation for plasma heating provides a higher plasma density, and more active nitrogen flow. Mirror-smooth homogeneous hexagonal InN films were grown on ittria-stabilized zirconia and sapphire substrates. It was shown that single-crystal InN films can be grown on Al2O3 (0001) substrates if a double buffer layer of InN/GaN is used. The growth rate of 1 µm/h was demonstrated in this case. Film properties are studied by optical and electron microscopies, secondary ion mass spectroscopy, X-ray diffraction, and photoluminescence.