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The effects of atomic hydrogen irradiation on the surface cleaning of InP substrates have been investigated by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Carbon and oxygen-free clean surfaces of InP have been produced for a temperature range of as low as about 350°C for 30 min irradiation of atomic hydrogen. Under this condition, the RHEED patterns have revealed phosphorus-stabilized (2×4) reconstructed surfaces while indium-stabilized (4×2) reconstruction patterns have been observed upon cleaning by using the conventional arsenic irradiation at 530°C.
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Chun et al. (1993) studied this question.
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