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Current-voltage and current-temperature characteristics of tungsten-nickel point contact diodes with interface barriers 500 to 1500 A thick are investigated in order to obtain the contact area and barrier heights on each side. It is found that the barrier height on the nickel side is about 0.39 eV and that on the tungsten side is about 0.34 eV, and that the contact area is of the order of 1×10-11 to 1×10-12 cm2.
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Yasuoka et al. (1980) studied this question.
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