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A simple, safe, and clean molecular precursor-based solution method was developed to fabricate a Cu(In,Ga)(S,Se)2 absorber layer. Low-cost and versatile thioacetic acid was deployed as an effective solvent and suitable sulfur source to dissolve the starting materials, generating a high power conversion efficiency of 8.6% in the final cell.
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Xie et al. (2014) studied this question.
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